Effect of different preparation conditions on light emission from silicon implanted SiO2 layers
نویسندگان
چکیده
Visible light emission from Si implanted SiO2 layers as a function of different annealing conditions ~temperature, time and ambient! is studied. It is shown that a 560 nm band, present in as implanted samples, increases its intensity for increasing annealing temperatures and is still observed after annealing at 1000 °C. The emission time is fast ~0.5–2 ns!. A second band centered at 780 nm is detected after annealing at 1000 °C. The intensity of the 780 nm band further increases when hydrogen annealing was performed. The emission time is long ~1ms–0.3 ms!. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed. © 1996 American Institute of Physics. @S0021-8979~96!09910-7#
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